I found on wikipedia (dot) org the according paragraph on erasing the nor memory by voltage and wanted to share it with you guys:
To erase a NOR flash cell (resetting it to the "1" state), a large voltage of the opposite polarity is applied between the CG and source, pulling the electrons off the FG through quantum tunneling. Modern NOR flash memory chips are divided into erase segments (often called blocks or sectors). The erase operation can only be performed on a block-wise basis; all the cells in an erase segment must be erased together. Programming of NOR cells, however, can generally be performed one byte or word at a time.
It's somewhat risky but if someone is willing to try and tell us the results that might lead to something useful eventually like a different way to approach nor memory
if not sorry to bother you